Kioxia and Sandisk launch 10th-generation output in Japan

Kioxia Corporation and Sandisk Corporation started production of 10th-generation 3D flash memory at Fab2, known as K2, in Iwate Prefecture, Japan.

The companies announced the move on 2 July 2026 from Tokyo and Milpitas, California.

Fab2 opened in September 2025 and has produced the companies’ 8th-generation 3D flash memory products since then.

Now the site will scale production with the introduction of 10th-generation products, as Kioxia and Sandisk target multi-year bit growth.

An unveiling ceremony for the K2 facility took place alongside the production start on 2 July 2026.

Fab2 opens wider 10th-generation output

Both the 8th and 10th generations use CBA, or CMOS directly Bonded to Array, technology.

According to the companies, that design delivers high performance, high capacity and low power consumption.

Fab2 also has an earthquake-absorbing architectural structure and state-of-the-art energy-saving manufacturing equipment.

The facility uses artificial intelligence to improve production efficiency and a space-efficient design to enlarge clean-room space for manufacturing equipment.

Meanwhile, Kioxia and Sandisk recently extended their joint venture framework through December 2034.

The Sandisk-Kioxia partnership has driven NAND flash memory innovation for decades, and both companies linked further K2 investment to long-term output growth and stable supply.

Koichiro Shibayama, president and chief executive of Kioxia Iwate Corporation, said: “We are pleased to begin production of our advanced 10th-generation flash memory here in Kitakami.”

Shibayama also said the eighth and later generation products from Fab2 will deliver new value to the fast-growing AI market.

He linked the expansion at Fab2 to sustainable corporate growth and to the development of local and domestic economies.

Sandisk chief technology officer Alper Ilkbahar called the production start an important milestone for the two companies.

Ilkbahar said: “For decades Sandisk and Kioxia have driven innovation in NAND flash memory.”

He tied the 10th-generation launch at the Iwate Prefecture facility to growing demand for high-performance flash memory technology.